Thermoelectric power of a material, typically governed by its band structureand carrier density, can be varied by chemical doping that is often restrictedby solubility of the dopant. Materials showing large thermoelectric power areuseful for many industrial applications, such as the heat-to-electricityconversion and the thermoelectric cooling device. Here we show a full electricfield tuning of thermoelectric power in a dual-gated bilayer graphene deviceresulting from the opening of a band-gap by applying a perpendicular electricfield on bilayer graphene. We uncover a large enhancement in thermoelectricpower at low temperature, which may open up a new possibility in lowtemperature thermoelectric application using graphene-based device.
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